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AO3414

Mfr Part #
:
AO3414

Description
:

Trans MOSFET N-CH 20V 3A 3-Pin SOT-23

Manufacturer Part No : AO3414
Description : Trans MOSFET N-CH 20V 3A 3-Pin SOT-23

*Inclusive of Indian Custom Duty+18.0% GST EXTRA As Applicable

Supplier Availability VendorPart# Price Slabs Item Quantity* Order Value Order
Arrow Americas

Arrow Americas

Stock : 0 Date Code : 2106

Factory Lead Time : 28 Days

Minimum : 6000 Multiples : 3000

Ware House: US Warehouse

0

RFQ
Chipmall Electronics

Chipmall Electronics

Stock : 18100

Minimum : 1 Multiples : 1

Ware House: China Warehouse

4589036

DigiKey Electronics(Cut Tape)

DigiKey Electronics(Cut Tape)

Stock : 0

Factory Lead Time : 0 Days

Minimum : 1 Multiples : 1

Ware House: US Warehouse

785-1009-1-ND

0

RFQ
Digikey Electronics(Digi Reel)

Digikey Electronics(Digi Reel)

Stock : 0

Factory Lead Time : 0 Days

Minimum : 1 Multiples : 1

Ware House: US Warehouse

785-1009-6-ND

0

RFQ
Digikey Electronics(Tape & Reel)

Digikey Electronics(Tape & Reel)

Stock : 0

Factory Lead Time : 0 Days

Minimum : 3000 Multiples : 3000

Ware House: US Warehouse

785-1009-2-ND

0

RFQ
LCSC

LCSC

Stock : 415

Minimum : 1 Multiples : 1

Ware House: China Warehouse

C48850

TME

TME

Stock : 1

Minimum : 5 Multiples : 1

Ware House: Poland Warehouse

AO3414

Product Attribute
Case

SOT23

Continuous Drain Current (Id) @ 25°C

3A

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drain current

2.5A

Drain to Source Voltage (Vdss)

20V

Drain to Source Voltage(Vdss)

20V

Drain-source voltage

20V

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

FET Feature

-

FET Type

N Channel

FET Type

N-Channel

Gate charge

3.8nC

Gate Charge (Qg) (Max) @ Vgs

6.2nC @ 4.5V

Gate-source voltage

±8V

Input Capacitance (Ciss) (Max) @ Vds

436pF @ 10V

Kind of channel

enhanced

Manufacturer

ALPHA & OMEGA SEMICONDUCTOR

Mounting

SMD

Mounting Type

Surface Mount

On-state resistance

85mΩ

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

TO-236-3, SC-59, SOT-23-3

Packaging

Tape & Reel (TR)

Part Status

Not For New Designs

Polarisation

Unipolar

Power dissipation

900mW

Power Dissipation (Max)

1.4W (Ta)

Power Dissipation-Max (Ta=25°C)

1.4W

Rds On (Max) @ Id, Vgs

50mOhm @ 4.2A, 4.5V

Rds On (Max) @ Id, Vgs

50mΩ @ 4.2A,4.5V

Supplier Device Package

SOT-23-3

Technology

MOSFET (Metal Oxide)

Type of transistor

N-MOSFET

Vgs (Max)

±8V

Vgs(th) (Max) @ Id

1V @ 250µA

Vgs(th) (Max) @ Id

1V @ 250uA

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