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AON7506

Mfr Part #
:
AON7506

Description
:

Trans MOSFET N-CH 30V 12A 8-Pin DFN-A EP T/R

Manufacturer Part No : AON7506
Description : Trans MOSFET N-CH 30V 12A 8-Pin DFN-A EP T/R

*Inclusive of Indian Custom Duty+18.0% GST EXTRA As Applicable

Supplier Availability VendorPart# Price Slabs Item Quantity* Order Value Order
Arrow Americas

Arrow Americas

Stock : 0

Factory Lead Time : 28 Days

Minimum : 5000 Multiples : 5000

Ware House: US Warehouse

0

RFQ
DigiKey Electronics(Cut Tape)

DigiKey Electronics(Cut Tape)

Stock : 0

Factory Lead Time : 0 Days

Minimum : 5000 Multiples : 5000

Ware House: US Warehouse

AON7506-ND

0

RFQ
LCSC

LCSC

Stock : 11

Minimum : 1 Multiples : 1

Ware House: China Warehouse

C485678

TME

TME

Stock : 600

Minimum : 3 Multiples : 1

Ware House: Poland Warehouse

AON7506

Product Attribute
Case

DFN3x3 EP

Continuous Drain Current (Id) @ 25°C

12A(Tc)

Current - Continuous Drain (Id) @ 25°C

12A (Ta), 12A (Tc)

Drain current

9.4A

Drain to Source Voltage (Vdss)

30V

Drain to Source Voltage(Vdss)

30V

Drain-source voltage

30V

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

FET Feature

-

FET Type

N Channel

FET Type

N-Channel

Gate charge

4.3nC

Gate Charge (Qg) (Max) @ Vgs

12.2nC @ 10V

Gate-source voltage

±20V

Input Capacitance (Ciss) (Max) @ Vds

542pF @ 15V

Kind of channel

enhanced

Manufacturer

ALPHA & OMEGA SEMICONDUCTOR

Mounting

SMD

Mounting Type

Surface Mount

On-state resistance

9.8mΩ

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

8-PowerVDFN

Packaging

Tape & Reel (TR)

Part Status

Active

Polarisation

Unipolar

Power dissipation

8W

Power Dissipation (Max)

3.1W (Ta), 20.5W (Tc)

Power Dissipation-Max (Ta=25°C)

3.1W

Rds On (Max) @ Id, Vgs

9.8mOhm @ 12A, 10V

Rds On (Max) @ Id, Vgs

9.8mΩ @ 12A,10V

Supplier Device Package

8-DFN (3x3)

Technology

MOSFET (Metal Oxide)

Type of transistor

N-MOSFET

Vgs (Max)

±20V

Vgs(th) (Max) @ Id

2.3V @ 250µA

Vgs(th) (Max) @ Id

2.3V @ 250uA

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